2007. 10. 31 1/6 semiconductor technical data KMB080N75PA n channel mos field effect transistor revision no : 2 general description it s mainly suitable for low voltage applications such as automotive, dc/dc converters and a load switch in battery powered applications features v dss = 75v, i d = 80a drain-source on resistance : r ds(on) =12m (max.) @v gs = 10v mosfet maximum rating (ta=25 unless otherwise noted) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 g d s characteristic symbol rating unit drain-source voltage v dss 75 v gate-source voltage v gss 25 v drain current dc i d * 80 a pulsed (note 1) i dp 320 a drain-source diode forward current i s 80 a drain power dissipation p d * 25 300 w maximum junction temperature t j -55 175 storage temperature range t stg -55 175 note1) pulse test : pulse width 10 s duty cycle 1% characteristic symbol rating unit thermal resistance, junction-to-ambient r thja 62.5 /w thermal resistance, junction-to-case r thjc 0.5 /w thermal characteristics equivalent circuit
2007. 10. 31 2/6 KMB080N75PA revision no : 2 mosfet electrical characteristics (ta=25 unless otherwise noted) note 1) pulse test : pulse width 10 s, duty cycle 1%. note 2) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 75 - - v drain cut-off current i dss v ds =75v, v gs =0v, - - 10 a gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs , i d =250 a 2 - 4 v drain-source on resistance r ds(on) v gs =10v, i d =40a - 10 12 forward transconductance g fs v ds =15v, i d =40a - 20 - dynamic input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 3700 - pf output capacitance c oss - 730 - reverse transfer capacitance c rss - 240 - total gate charge q g v ds = 60v, v gs = 10v, i d =40a (note1,2) - 117 - nc gate-source charge q gs - 27 - gate-drain charge q gd - 47 - turn-on delay time t d(on) v dd = 30.5v i d =40a r g =25 (note1,2) - 25 - turn-on rise time t r - 25 - ns turn-off delay time t d(off) - 66 - turn-off fall time t f - 30 - diode electrical characteristics (ta=25 unless otherwise noted) characteristic symbol test condition min. typ. max. unit diode forward voltage v sd i sd =80a, v gs =0v - - 1.5 v reverse recovery time t rr v gs =0v, i s =80a, dif/dt=100a/ s - 132 - 701 a 2 2 kmb 080n75p product name lot no 1 1 marking
2007. 10. 31 3/6 KMB080N75PA revision no : 2 gate - source voltage v gs (v) fig 1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 0 0 4 8 12 16 20 60 120 300 240 180 fig 3. i d - v gs fig 2. r ds(on) - i d drain current i d (a) drain current i d (a) on - resistance r ds(on) (m ? ) fig 6. i dr - v dsf 0.2 0.4 0.8 0.6 1.2 1.0 1.4 reverse drain current i s (a) 8.0 9.2 10 9.6 8.4 8.8 040 20 60 100 80 source - drain voltage v sd (v) v gs = 10v 10 0 10 1 10 -1 fig 4. r ds(on) - t j 0 50 -50 100 150 normalized on resistance 0.2 0.6 2.2 1.0 1.4 1.8 junction temperature t j ( ) c v gs = 10v i ds = 40a fig 5. v th - t j 0 50 -50 100 150 normalized on resistance 0.6 0.7 1.1 0.8 0.9 1.0 junction temperature t j ( ) c v ds = v gs i d = 250 a v gs = 0 250 s pulse test 150 c 25 c 0 0246810 60 120 300 240 180 7v 9v 10v 6v v gs =5v common source t c =25 c pulse test t c =25 c common source t c =25 c pulse test
2007. 10. 31 4/6 KMB080N75PA revision no : 2 drain current i d (a) gate - charge q g (nc) fig 8. c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 15 6 3 9 60 30 120 150 90 0 20 10 50 30 40 0 fig 7. q g - v gs fig 9. safe operation area capacitance (pf) gate - source voltage v gs (v) 0 6000 2000 4000 8000 10000 10 1 10 -1 10 1 10 0 10 0 10 3 10 2 10 3 10 2 10 -1 f=1mhz v gs =0v c oss c iss c rss r ds(on) limits 1ms 10ms 100 s dc square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.01 0.1 1 fig 10. r th normalized transient thermal resistance - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 single pulse 0.2 0.1 0.05 0.02 0.01
2007. 10. 31 5/6 KMB080N75PA revision no : 2 0.5 x v dss t p - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss schottky diode 10v -4.5v 6 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f 90% 10% - resistive load switching v gs
2007. 10. 31 6/6 KMB080N75PA revision no : 2 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
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